Investigation of ga segregation at sio2-si interface
文献类型：期刊论文
| 作者 | Zhang, XH; Pei, SH; Xiu, XW |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2001-11-01 |
| 卷号 | 30页码:560-563 |
| 关键词 | Interface Near-surface Segregation Width of the exhausted region |
| ISSN号 | 1002-185X |
| 通讯作者 | Zhang, xh() |
| 英文摘要 | Segregation of ga at sio2-si interface has been investigated by secondary ion mass spectroscopic (sims) analysis when the oxide is regrown. the result indicates that the fast diffusivity of ga in sio2 causes the loss of the impurity in si, and the amount of ga atom out-diffused into sio2 increases with time prolongation of thermal oxidation while the concentration on the si surface decreases and the exhausted region is widened. based on the experimental data, the variation characterizations of the lowest si surface concentration and width of the exhausted region during ga segregation are given. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000175387800112 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429018 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, XH |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, XH,Pei, SH,Xiu, XW. Investigation of ga segregation at sio2-si interface[J]. Rare metal materials and engineering,2001,30:560-563. |
| APA | Zhang, XH,Pei, SH,&Xiu, XW.(2001).Investigation of ga segregation at sio2-si interface.Rare metal materials and engineering,30,560-563. |
| MLA | Zhang, XH,et al."Investigation of ga segregation at sio2-si interface".Rare metal materials and engineering 30(2001):560-563. |
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来源：半导体研究所
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