Indium doping effect on gan in the initial growth stage
文献类型：期刊论文
| 作者 | Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Wang, XH; Wang, D; Han, PD |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2001-08-01 |
| 卷号 | 30期号:8页码:977-979 |
| 关键词 | Gan Indium doping Initial growth stage Morphology Optical transmission Photoluminescence |
| ISSN号 | 0361-5235 |
| 通讯作者 | Yuan, hr() |
| 英文摘要 | Three minutes' growth was carried out to investigate the indium-doping effect on initially grown gan. indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. atomic force microscope observation revealed that in-doping modified the morphology of the nuclei. indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. x-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. the mechanism of the indium-doping effect was discussed. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; BUFFER LAYER ; FILMS ; SAPPHIRE ; DEPOSITION |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000170458500012 |
| 出版者 | MINERALS METALS MATERIALS SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429028 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yuan, HR |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yuan, HR,Lu, DC,Liu, XL,et al. Indium doping effect on gan in the initial growth stage[J]. Journal of electronic materials,2001,30(8):977-979. |
| APA | Yuan, HR.,Lu, DC.,Liu, XL.,Chen, Z.,Wang, XH.,...&Han, PD.(2001).Indium doping effect on gan in the initial growth stage.Journal of electronic materials,30(8),977-979. |
| MLA | Yuan, HR,et al."Indium doping effect on gan in the initial growth stage".Journal of electronic materials 30.8(2001):977-979. |
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来源：半导体研究所
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