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Chinese Academy of Sciences Institutional Repositories Grid
Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd

文献类型:期刊论文

作者Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Yang, H; Liang, JW
刊名Science in china series a-mathematics physics astronomy
出版日期2001-06-01
卷号44期号:6页码:777-782
关键词3c-sic Microtwins X-ray four-circle diffractometer Apcvd
ISSN号1006-9283
通讯作者Zheng, xh()
英文摘要Microtwins in the 3c-sic films grown on si(001) by apcvd were analyzed in detail using an x-ray four-circle diffractometer. the empty set scan shows that 3c-sic films can grow on si substrates epitaxially and the epitaxial relationship is revealed as (001)(3c-sic)//(001)(si), [111](3c-sic)//[111](si). other diffractions emerged in the pole figures of the (111) 3c-sic. we performed the (10 (1) over bar0) h-sic and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal sic but microtwins of 3c-sic, and twin inclusions are estimated to be 1%.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; SILICON-CARBIDE ; PHASE EPITAXY ; THIN-FILMS ; GAN ; SI ; SUBSTRATE ; DEFECTS ; NITRIDE ; MBE
WOS研究方向Mathematics
WOS类目Mathematics, Applied ; Mathematics
语种英语
WOS记录号WOS:000169617000010
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429035
专题半导体研究所
通讯作者Zheng, XH
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zheng, XH,Qu, B,Wang, YT,et al. Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd[J]. Science in china series a-mathematics physics astronomy,2001,44(6):777-782.
APA Zheng, XH,Qu, B,Wang, YT,Dai, ZZ,Yang, H,&Liang, JW.(2001).Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd.Science in china series a-mathematics physics astronomy,44(6),777-782.
MLA Zheng, XH,et al."Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd".Science in china series a-mathematics physics astronomy 44.6(2001):777-782.

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来源:半导体研究所

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