Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd
文献类型:期刊论文
作者 | Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Yang, H; Liang, JW |
刊名 | Science in china series a-mathematics physics astronomy
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出版日期 | 2001-06-01 |
卷号 | 44期号:6页码:777-782 |
关键词 | 3c-sic Microtwins X-ray four-circle diffractometer Apcvd |
ISSN号 | 1006-9283 |
通讯作者 | Zheng, xh() |
英文摘要 | Microtwins in the 3c-sic films grown on si(001) by apcvd were analyzed in detail using an x-ray four-circle diffractometer. the empty set scan shows that 3c-sic films can grow on si substrates epitaxially and the epitaxial relationship is revealed as (001)(3c-sic)//(001)(si), [111](3c-sic)//[111](si). other diffractions emerged in the pole figures of the (111) 3c-sic. we performed the (10 (1) over bar0) h-sic and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal sic but microtwins of 3c-sic, and twin inclusions are estimated to be 1%. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SILICON-CARBIDE ; PHASE EPITAXY ; THIN-FILMS ; GAN ; SI ; SUBSTRATE ; DEFECTS ; NITRIDE ; MBE |
WOS研究方向 | Mathematics |
WOS类目 | Mathematics, Applied ; Mathematics |
语种 | 英语 |
WOS记录号 | WOS:000169617000010 |
出版者 | SCIENCE PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429035 |
专题 | 半导体研究所 |
通讯作者 | Zheng, XH |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zheng, XH,Qu, B,Wang, YT,et al. Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd[J]. Science in china series a-mathematics physics astronomy,2001,44(6):777-782. |
APA | Zheng, XH,Qu, B,Wang, YT,Dai, ZZ,Yang, H,&Liang, JW.(2001).Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd.Science in china series a-mathematics physics astronomy,44(6),777-782. |
MLA | Zheng, XH,et al."Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd".Science in china series a-mathematics physics astronomy 44.6(2001):777-782. |
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来源:半导体研究所
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