Carbonization process of si(100) by ion-beam bombardment
文献类型：期刊论文
| 作者 | Liao, MY; Chai, CL; Yao, ZY; Yang, SY; Liu, ZK; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-12-01 |
| 卷号 | 233期号:3页码:446-450 |
| 关键词 | Diffusion Growth models Ion bombardment Reflection high energy electron diffraction Physical vapor phase deposition Semiconducting silicon compounds |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liao, my() |
| 英文摘要 | The evolution of carbonization process on si as a function of ion dose has been carried out by mass-selected ion-beam deposition technique. 3c-sic layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and x-ray photoelectron spectroscopy (xps). the chemical states of si and carbon have also been examined as a function of ion dose by xps. carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate. the formation mechanism of sic has also been discussed based on the subplantation process. the work will also provide further understanding of the ion-bombardment effect. (c) 2001 published by elsevier science b.v. |
| WOS关键词 | CUBIC GAN ; GROWTH ; DEPOSITION ; EPITAXY ; SILICON ; DIAMOND |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000171381500005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429037 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liao, MY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liao, MY,Chai, CL,Yao, ZY,et al. Carbonization process of si(100) by ion-beam bombardment[J]. Journal of crystal growth,2001,233(3):446-450. |
| APA | Liao, MY,Chai, CL,Yao, ZY,Yang, SY,Liu, ZK,&Wang, ZG.(2001).Carbonization process of si(100) by ion-beam bombardment.Journal of crystal growth,233(3),446-450. |
| MLA | Liao, MY,et al."Carbonization process of si(100) by ion-beam bombardment".Journal of crystal growth 233.3(2001):446-450. |
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来源：半导体研究所
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