Mnsi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
文献类型：期刊论文
| 作者 | Yang, JL; Chen, NF; Liu, ZK; Yang, SY; Chai, CL; Liao, MY; He, HJ |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-08-01 |
| 卷号 | 226期号:4页码:517-520 |
| 关键词 | X-ray diffraction Ion beam epitaxy Semiconducting manganese silicide |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, nf() |
| 英文摘要 | Semiconducting manganese silicide, mn27si47 and mn15si26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique, auger electron spectroscopy depth profiles showed that some of the mn ions were deposited on single-crystal silicon substrate and formed a 37.5 nm thick mn film, and the other mn ions were successfully implanted into the si substrate with the implantation depth of 618 nm. some samples were annealed in the atmosphere of flowing n-2 at 840 degreesc. x-ray diffraction measurements showed that the annealing was beneficial to the formation of mn27si47 and mn15si26 (c) 2001 published by elsevier science b.v. |
| WOS关键词 | SEMICONDUCTING SILICIDES ; THIN-FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000169714500011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429039 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, NF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, JL,Chen, NF,Liu, ZK,et al. Mnsi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique[J]. Journal of crystal growth,2001,226(4):517-520. |
| APA | Yang, JL.,Chen, NF.,Liu, ZK.,Yang, SY.,Chai, CL.,...&He, HJ.(2001).Mnsi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique.Journal of crystal growth,226(4),517-520. |
| MLA | Yang, JL,et al."Mnsi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique".Journal of crystal growth 226.4(2001):517-520. |
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来源：半导体研究所
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