Changing the size and shape of ge island by chemical etching
文献类型：期刊论文
| 作者 | Gao, F; Huang, CJ; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-09-01 |
| 卷号 | 231期号:1-2页码:17-21 |
| 关键词 | Atomic force microscopy Etching Nanostructures Molecular beam epitaxy Semiconducting germanium Semiconducting silicon |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, f() |
| 英文摘要 | Self-assembled ge islands were grown on si (1 0 0) substrate by si2h6-ge molecular beam epitaxy. subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of ge islands change with etching time. in addition, the photoluminescence from the etched ge islands shifted to the higher energy side compared to that of the as-deposited ge islands. our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | QUANTUM DOTS ; INAS ; GROWTH ; STRAIN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000170122600004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429049 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, CJ,Huang, DD,et al. Changing the size and shape of ge island by chemical etching[J]. Journal of crystal growth,2001,231(1-2):17-21. |
| APA | Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Changing the size and shape of ge island by chemical etching.Journal of crystal growth,231(1-2),17-21. |
| MLA | Gao, F,et al."Changing the size and shape of ge island by chemical etching".Journal of crystal growth 231.1-2(2001):17-21. |
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来源：半导体研究所
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