Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted pecvd
文献类型：期刊论文
| 作者 | Feng, Y; Zhu, M; Liu, F; Liu, J; Han, H; Han, Y |
| 刊名 | Thin solid films
 |
| 出版日期 | 2001-09-03 |
| 卷号 | 395期号:1-2页码:213-216 |
| 关键词 | Poly-si Structure Hot-wire Plasma-enhanced chemical vapor deposition (pecvd) |
| ISSN号 | 0040-6090 |
| 通讯作者 | Zhu, m() |
| 英文摘要 | Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (pecvd) system as a catalyzer: we name this technique 'hot-wire-assisted pecvd' (hw-pecvd). under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (t-f) on the structural properties of the poly-si films have been characterized by x-ray diffraction (xrd), raman scattering and fourier-transform infrared (ftir) spectroscopy. compared with conventional pecvd, the grain size, crystalline volume fraction (x-e) and deposition rate were all enhanced when a high t-f was used. the best poly-si film exhibits a preferential (220) orientation, with a full width at half-maximum (fwhm) of 0.2 degrees. the si-si to peak of the raman scattering spectrum is located at 519.8 cm(-1) with a fwhm of 7.1 cm(-1). the x-c is 0.93. these improvements are mainly the result of promotion of the dissociation of sih4 and an increase in the atomic h concentration in the gas phase. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; MICROCRYSTALLINE SILICON ; HYDROGEN |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000171625000044 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429057 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, M |
| 作者单位 | 1.Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100039, Peoples R China 2.Chinese Acad Sci, Lab Semicond Mat Sci, Beijing 100039, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Y,Zhu, M,Liu, F,et al. Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted pecvd[J]. Thin solid films,2001,395(1-2):213-216. |
| APA | Feng, Y,Zhu, M,Liu, F,Liu, J,Han, H,&Han, Y.(2001).Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted pecvd.Thin solid films,395(1-2),213-216. |
| MLA | Feng, Y,et al."Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted pecvd".Thin solid films 395.1-2(2001):213-216. |
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来源：半导体研究所
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