Conduction band offset and electron effective mass in gainnas/gaas quantum-well structures with low nitrogen concentration
文献类型：期刊论文
| 作者 | Pan, Z; Li, LH; Lin, YW; Sun, BQ; Jiang, DS; Ge, WK |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2001-04-09 |
| 卷号 | 78期号:15页码:2217-2219 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Pan, z() |
| 英文摘要 | We have investigated the optical transitions in ga1-yinynxas1-x/gaas single and multiple quantum wells using photovoltaic measurements at room temperature. from a theoretical fit to the experimental data, the conduction band offset q(c), electron effective mass m(e)*, and band gap energy e-g were estimated. it was found that the q(c) is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0-1)%. the m(e)* of gainnas is much greater than that of ingaas with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. our experimental results for the m(e)* and e-g of gainnas are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized n states. (c) 2001 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; INGAASN ; LASER ; OPERATION ; ALLOYS ; GROWTH ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000167881500042 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429067 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan, Z |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, Z,Li, LH,Lin, YW,et al. Conduction band offset and electron effective mass in gainnas/gaas quantum-well structures with low nitrogen concentration[J]. Applied physics letters,2001,78(15):2217-2219. |
| APA | Pan, Z,Li, LH,Lin, YW,Sun, BQ,Jiang, DS,&Ge, WK.(2001).Conduction band offset and electron effective mass in gainnas/gaas quantum-well structures with low nitrogen concentration.Applied physics letters,78(15),2217-2219. |
| MLA | Pan, Z,et al."Conduction band offset and electron effective mass in gainnas/gaas quantum-well structures with low nitrogen concentration".Applied physics letters 78.15(2001):2217-2219. |
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来源：半导体研究所
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