Photoluminescence studies of type-ii self-assembled inalas/algaas qds grown on (311)a gaas substrate
文献类型：期刊论文
| 作者 | Chen, Y; Li, GH; Zhu, ZM; Han, HX; Wang, ZP; Zhou, W; Wang, ZG |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2001-02-01 |
| 卷号 | 20期号:1页码:53-56 |
| 关键词 | Inalas/algaas Quantum dot Pressure Photoluminescence |
| ISSN号 | 1001-9014 |
| 通讯作者 | Chen, y() |
| 英文摘要 | The photoluminescence (pl) spectra of self-assembled in0.55al0.45as/al0.45ga0.5as quantum dots (qd) grown on (311)a gaas substrate were measured. the type- i character of pl related to the x valley was verified by excitation power dependence of peak position and the pl spectra under different pressure , which was attributed to the type- ii transition from x valley in al0.5ga0.5as to heavy holes in in0.55al0.45as the high energy gamma -related transition was also observed above 70k and assigned as the transition between gamma valley and heavy holes in in-0.55 al0.45as. the x-valley split was discussed to interpret the observed second x-related peak under pressure. |
| WOS关键词 | QUANTUM DOTS ; PRESSURE ; SUPERLATTICES ; LINEWIDTH ; INSB ; GASB |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000167228000014 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429069 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Y |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Y,Li, GH,Zhu, ZM,et al. Photoluminescence studies of type-ii self-assembled inalas/algaas qds grown on (311)a gaas substrate[J]. Journal of infrared and millimeter waves,2001,20(1):53-56. |
| APA | Chen, Y.,Li, GH.,Zhu, ZM.,Han, HX.,Wang, ZP.,...&Wang, ZG.(2001).Photoluminescence studies of type-ii self-assembled inalas/algaas qds grown on (311)a gaas substrate.Journal of infrared and millimeter waves,20(1),53-56. |
| MLA | Chen, Y,et al."Photoluminescence studies of type-ii self-assembled inalas/algaas qds grown on (311)a gaas substrate".Journal of infrared and millimeter waves 20.1(2001):53-56. |
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来源：半导体研究所
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