Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation
文献类型：期刊论文
| 作者 | Luo, XD; Xu, ZY; Ge, WK; Pan, Z; Li, LH; Lin, YW |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2001-08-13 |
| 卷号 | 79期号:7页码:958-960 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Luo, xd() |
| 英文摘要 | Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (pl) emission from ganas/gaas single quantum wells (qws). it dominates the pl spectra under high excitation and/or at high temperature. by measuring the pl dependence on both temperature and excitation power and by analyzing the time-resolved pl results, we have attributed the pl peak to the recombination of delocalized excitons in qws. furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent pl spectra under the short pulse excitation. this competition is believed to be responsible for the temperature-induced s-shaped pl shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (c) 2001 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; BAND-GAP ENERGY ; TEMPERATURE PHOTOLUMINESCENCE ; MECHANISM ; GANXAS1-X ; EMISSION ; NITROGEN ; ALLOYS ; SHIFT ; GANAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000170277500022 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429072 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Optoelect Res Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, XD,Xu, ZY,Ge, WK,et al. Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation[J]. Applied physics letters,2001,79(7):958-960. |
| APA | Luo, XD,Xu, ZY,Ge, WK,Pan, Z,Li, LH,&Lin, YW.(2001).Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation.Applied physics letters,79(7),958-960. |
| MLA | Luo, XD,et al."Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation".Applied physics letters 79.7(2001):958-960. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。