Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation
文献类型:期刊论文
作者 | Luo, XD; Xu, ZY; Ge, WK; Pan, Z; Li, LH; Lin, YW |
刊名 | Applied physics letters
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出版日期 | 2001-08-13 |
卷号 | 79期号:7页码:958-960 |
ISSN号 | 0003-6951 |
通讯作者 | Luo, xd() |
英文摘要 | Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (pl) emission from ganas/gaas single quantum wells (qws). it dominates the pl spectra under high excitation and/or at high temperature. by measuring the pl dependence on both temperature and excitation power and by analyzing the time-resolved pl results, we have attributed the pl peak to the recombination of delocalized excitons in qws. furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent pl spectra under the short pulse excitation. this competition is believed to be responsible for the temperature-induced s-shaped pl shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (c) 2001 american institute of physics. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; BAND-GAP ENERGY ; TEMPERATURE PHOTOLUMINESCENCE ; MECHANISM ; GANXAS1-X ; EMISSION ; NITROGEN ; ALLOYS ; SHIFT ; GANAS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000170277500022 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429072 |
专题 | 半导体研究所 |
通讯作者 | Luo, XD |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Optoelect Res Ctr, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Luo, XD,Xu, ZY,Ge, WK,et al. Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation[J]. Applied physics letters,2001,79(7):958-960. |
APA | Luo, XD,Xu, ZY,Ge, WK,Pan, Z,Li, LH,&Lin, YW.(2001).Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation.Applied physics letters,79(7),958-960. |
MLA | Luo, XD,et al."Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation".Applied physics letters 79.7(2001):958-960. |
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来源:半导体研究所
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