中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation

文献类型:期刊论文

作者Luo, XD; Xu, ZY; Ge, WK; Pan, Z; Li, LH; Lin, YW
刊名Applied physics letters
出版日期2001-08-13
卷号79期号:7页码:958-960
ISSN号0003-6951
通讯作者Luo, xd()
英文摘要Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (pl) emission from ganas/gaas single quantum wells (qws). it dominates the pl spectra under high excitation and/or at high temperature. by measuring the pl dependence on both temperature and excitation power and by analyzing the time-resolved pl results, we have attributed the pl peak to the recombination of delocalized excitons in qws. furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent pl spectra under the short pulse excitation. this competition is believed to be responsible for the temperature-induced s-shaped pl shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (c) 2001 american institute of physics.
WOS关键词MOLECULAR-BEAM EPITAXY ; BAND-GAP ENERGY ; TEMPERATURE PHOTOLUMINESCENCE ; MECHANISM ; GANXAS1-X ; EMISSION ; NITROGEN ; ALLOYS ; SHIFT ; GANAS
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000170277500022
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429072
专题半导体研究所
通讯作者Luo, XD
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Optoelect Res Ctr, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Luo, XD,Xu, ZY,Ge, WK,et al. Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation[J]. Applied physics letters,2001,79(7):958-960.
APA Luo, XD,Xu, ZY,Ge, WK,Pan, Z,Li, LH,&Lin, YW.(2001).Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation.Applied physics letters,79(7),958-960.
MLA Luo, XD,et al."Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation".Applied physics letters 79.7(2001):958-960.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。