Effect of as interstitial diffusionon on the properties of undoped semi-insulating lecgaas
文献类型：期刊论文
| 作者 | Yang, RX; Zhang, FQ; Chen, NF |
| 刊名 | Rare metals
 |
| 出版日期 | 2001-09-01 |
| 卷号 | 20期号:3页码:187-191 |
| 关键词 | Semi-insulating gaas Intrinsic acceptor defects As interstitial indiffusion As pressure Annealing |
| ISSN号 | 1001-0521 |
| 通讯作者 | Yang, rx() |
| 英文摘要 | Annealing was carried out at 950 and 1120 degreesc under various as pressure for undoped (nd) semi-insulating (si) lecgaas. the effects of annealing on native defects and electrical properties were investigated. experimental results indicate that, after an annealing at 950 degreesc for 14 h under low as pressure, the hall mobility decreases and the resistivity increases dramatically for the samples. these changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of as interstitial at high temperature. the generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied as pressure during annealing. the concentration of the main donor defect e12 (asgavga) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesc for 2-8 h followed by a fast cooling. the decrease in e12 concentration can also be suppressed by increasing the as pressure during annealing. |
| WOS关键词 | SEMIINSULATING GAAS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000172121600011 |
| 出版者 | NONFERROUS METALS SOCIETY CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429075 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, RX |
| 作者单位 | 1.Hebei Univ Technol, Tianjin 300130, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, RX,Zhang, FQ,Chen, NF. Effect of as interstitial diffusionon on the properties of undoped semi-insulating lecgaas[J]. Rare metals,2001,20(3):187-191. |
| APA | Yang, RX,Zhang, FQ,&Chen, NF.(2001).Effect of as interstitial diffusionon on the properties of undoped semi-insulating lecgaas.Rare metals,20(3),187-191. |
| MLA | Yang, RX,et al."Effect of as interstitial diffusionon on the properties of undoped semi-insulating lecgaas".Rare metals 20.3(2001):187-191. |
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来源：半导体研究所
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