Growth and photoluminescence of epitaxial ceo2 film on si (111) substrate
文献类型：期刊论文
| 作者 | Gao, F; Li, GH; Zhang, JH; Qin, FG; Yao, ZY; Liu, ZK; Wang, ZG; Lin, LY |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2001-03-01 |
| 卷号 | 18期号:3页码:443-444 |
| ISSN号 | 0256-307X |
| 通讯作者 | Gao, f() |
| 英文摘要 | A ceo2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an si(111) substrate. reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. the tetravalent state of ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric ceo2 was formed. violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of ceo2. |
| WOS关键词 | OPTICAL-PROPERTIES ; THIN-FILMS ; DEPOSITION ; EMISSION ; LAYERS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000167848000045 |
| 出版者 | ALLERTON PRESS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429083 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Li, GH,Zhang, JH,et al. Growth and photoluminescence of epitaxial ceo2 film on si (111) substrate[J]. Chinese physics letters,2001,18(3):443-444. |
| APA | Gao, F.,Li, GH.,Zhang, JH.,Qin, FG.,Yao, ZY.,...&Lin, LY.(2001).Growth and photoluminescence of epitaxial ceo2 film on si (111) substrate.Chinese physics letters,18(3),443-444. |
| MLA | Gao, F,et al."Growth and photoluminescence of epitaxial ceo2 film on si (111) substrate".Chinese physics letters 18.3(2001):443-444. |
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来源：半导体研究所
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