Si-based resonant-cavity-enhanced photodetector
文献类型：期刊论文
| 作者 | Wang, QM; Li, C; Cheng, BW; Yang, QQ |
| 刊名 | Optical engineering
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 40期号:7页码:1192-1194 |
| 关键词 | Rce photodetector Slge/si Simox Bragg reflector Top-illumination Bottom-illumination Responsivity spectra |
| ISSN号 | 0091-3286 |
| 通讯作者 | Wang, qm() |
| 英文摘要 | We report one top-illumination and one bottom-illumination sige/si multiple quantum-well (mqw) resonant-cavity-enhanced (rce) photodetector fabricated on a separation-by-implanted-oxygen (simox) wafer operating near 1300 nm. the buried oxygen layer in simox is used as a mirror to form a vertical cavity with the silicon dioxide/silicon bragg reflector deposited on the top surface. a peak responsivity with a reverse bias of 5 v is measured 10.2 ma/w at 1285 nm, a full width at half maximum of 25 nm for the top-illumination rce photodetector, 19 ma/w at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. the external quantum efficiency of the bottom-illumination rce photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25v. the responsivity of the bottom-illumination rce photodetector is improved by two-fold compared with that of the top-illumination one. (c) 2001 society of photo-optical instrumentation engineers. |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000170439000009 |
| 出版者 | SPIE-INT SOCIETY OPTICAL ENGINEERING |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429084 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, QM |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, QM,Li, C,Cheng, BW,et al. Si-based resonant-cavity-enhanced photodetector[J]. Optical engineering,2001,40(7):1192-1194. |
| APA | Wang, QM,Li, C,Cheng, BW,&Yang, QQ.(2001).Si-based resonant-cavity-enhanced photodetector.Optical engineering,40(7),1192-1194. |
| MLA | Wang, QM,et al."Si-based resonant-cavity-enhanced photodetector".Optical engineering 40.7(2001):1192-1194. |
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来源：半导体研究所
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