Optical properties and band lineup in ganxas1-x/gaas single quantum wells
文献类型：期刊论文
| 作者 | Luo, XD; Xu, ZY; Pan, Z; Li, LH; Lin, YW; Ge, WK |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2001-02-01 |
| 卷号 | 20期号:1页码:25-29 |
| 关键词 | Ganas Band offset Pl |
| ISSN号 | 1001-9014 |
| 通讯作者 | Luo, xd() |
| 英文摘要 | The optical properties and the band lineup in ganas/gaas single quantum wells (sqws) grown by molecular beam epitaxy (mbe) using photoluminescence (pl) technique were investigated. it was found that the low-temperature pl is dominated by the intrinsic localized exciton emission. by fitting the experimental datawith a simple calculation, band offset of the gan0.015as0.985/gaas heterostructure was estimated. moreover, deltae(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of deltae(c) is about 0. 110ev per % n, such smaller than that reported on the literature to (0.156 similar to 0.175 ev/n %). in addition, qc has little change whtn n composition increares, with an experimential relation of qc approximate tox(0.25). the band bowing coefficient (b) was also studied in this paper. the measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of wei su-huai and zunger alex (1996). |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; ALLOYS ; GANAS/GAAS ; 1.3-MU-M ; GAASN |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000167228000006 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429086 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Opto Elect, Beijing 100083, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, XD,Xu, ZY,Pan, Z,et al. Optical properties and band lineup in ganxas1-x/gaas single quantum wells[J]. Journal of infrared and millimeter waves,2001,20(1):25-29. |
| APA | Luo, XD,Xu, ZY,Pan, Z,Li, LH,Lin, YW,&Ge, WK.(2001).Optical properties and band lineup in ganxas1-x/gaas single quantum wells.Journal of infrared and millimeter waves,20(1),25-29. |
| MLA | Luo, XD,et al."Optical properties and band lineup in ganxas1-x/gaas single quantum wells".Journal of infrared and millimeter waves 20.1(2001):25-29. |
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来源：半导体研究所
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