High-quality metamorphic hemt grown on gaas substrates by mbe
文献类型：期刊论文
| 作者 | Zeng, YP; Cao, X; Cui, LJ; Kong, MY; Pan, L; Wang, BQ; Zhu, ZP |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 227页码:210-213 |
| ISSN号 | 0022-0248 |
| 关键词 | Molecular beam epitaxy High electron mobility transistors |
| 通讯作者 | Cao, x() |
| 英文摘要 | Metamorphic high electron mobility transistor (m-hemt) structures have been grown on gaas substrates by molecular beam epitaxy (mbe). linearly graded and the step-graded ingaas and inalas buffet layers hal e been compared, and tem, pl and low-temperature hall have been used to analyze the properties of the buffer layers and the m-hemt structure. for a single-delta-doped m-hemt structure with an in0.53ga0.47as channel layer and a 0.8 mum step-graded inalas buffer layer, room-temperature mobility of 9000 cm(2)/v s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. these results are nearly equivalent to those obtained for the same structure grown on an inp substrate. a basic m-hemt device with 1 mum gate was fabricated, and g(m) is larger than 400 ms/mm. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | DENSITY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000169557600040 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429090 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cao, X |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zeng, YP,Cao, X,Cui, LJ,et al. High-quality metamorphic hemt grown on gaas substrates by mbe[J]. Journal of crystal growth,2001,227:210-213. |
| APA | Zeng, YP.,Cao, X.,Cui, LJ.,Kong, MY.,Pan, L.,...&Zhu, ZP.(2001).High-quality metamorphic hemt grown on gaas substrates by mbe.Journal of crystal growth,227,210-213. |
| MLA | Zeng, YP,et al."High-quality metamorphic hemt grown on gaas substrates by mbe".Journal of crystal growth 227(2001):210-213. |
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来源：半导体研究所
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