Infrared study on the oxygen precipitation in floating-zone silicon grown in hydrogen ambience
文献类型：期刊论文
| 作者 | Li, HX; Li, CB; Xue, CS; Diao, ZY; Chen, LS; Zhu, L |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2001-11-01 |
| 卷号 | 30页码:568-571 |
| 关键词 | Oxygen precipitates Silicon Infrared spectrum |
| ISSN号 | 1002-185X |
| 通讯作者 | Li, hx() |
| 英文摘要 | Oxygen precipitates in the floating-zone silicon in the hydrogen ambience [fz(h)si] and in the neutron transmutation doping (ntd) fz(h) si were investigated by the infrared (ir) spectroscopy at the room temperature. in the intermediate temperature range of 600 degreesc similar to 850 degreesc, the formation of oxygen precipitates in the fz(h) si and in the ntd fz(h) si appeared. a dissolution of the oxygen precipitates occurred if the post-heating temperature was over 1000 degreesc but the high temperature stability of the oxygen precipitates was improved by preheating treatment at 1000 degreesc for 1h or by neutron radiation. |
| WOS关键词 | ABSORPTION |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000175387800114 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429092 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, HX,Li, CB,Xue, CS,et al. Infrared study on the oxygen precipitation in floating-zone silicon grown in hydrogen ambience[J]. Rare metal materials and engineering,2001,30:568-571. |
| APA | Li, HX,Li, CB,Xue, CS,Diao, ZY,Chen, LS,&Zhu, L.(2001).Infrared study on the oxygen precipitation in floating-zone silicon grown in hydrogen ambience.Rare metal materials and engineering,30,568-571. |
| MLA | Li, HX,et al."Infrared study on the oxygen precipitation in floating-zone silicon grown in hydrogen ambience".Rare metal materials and engineering 30(2001):568-571. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。