中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Random telegraph noise in the photoluminescence of individual gaxin1-xas quantum dots in gaas

文献类型:期刊论文

作者Panev, N; Pistol, ME; Zwiller, V; Samuelson, L; Jiang, W; Xu, B; Wang, Z
刊名Physical review b
出版日期2001-07-15
卷号64期号:4页码:4
ISSN号1098-0121
通讯作者Panev, n()
英文摘要We have investigated random telegraph noise in the photoluminescence from ingaas quantum dots in gaas. dots switching among two and three levels have been measured. the experiments show that the switching ingaas dots behave very similarly to switching inp dots in gainp. but differently from the more commonly investigated colloidal dots. the switching is attributed to defects, and we show that the switching can be used as a monitor of the defect.
WOS关键词SPECTROSCOPY
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
WOS记录号WOS:000170119700070
出版者AMER PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2429093
专题半导体研究所
通讯作者Panev, N
作者单位1.Univ Lund, S-22100 Lund, Sweden
2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Panev, N,Pistol, ME,Zwiller, V,et al. Random telegraph noise in the photoluminescence of individual gaxin1-xas quantum dots in gaas[J]. Physical review b,2001,64(4):4.
APA Panev, N.,Pistol, ME.,Zwiller, V.,Samuelson, L.,Jiang, W.,...&Wang, Z.(2001).Random telegraph noise in the photoluminescence of individual gaxin1-xas quantum dots in gaas.Physical review b,64(4),4.
MLA Panev, N,et al."Random telegraph noise in the photoluminescence of individual gaxin1-xas quantum dots in gaas".Physical review b 64.4(2001):4.

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来源:半导体研究所

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