中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ion bombardment as the initial stage of diamond film growth

文献类型:期刊论文

作者Liao, MY; Qin, FG; Zhang, JH; Liu, ZK; Yang, SY; Wang, ZG; Lee, ST
刊名Journal of applied physics
出版日期2001-02-01
卷号89期号:3页码:1983-1985
ISSN号0021-8979
通讯作者Liao, my()
英文摘要It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (cvd), ion bombardment is the main mechanism in the bias-enhanced-nucleation (ben) process. to verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a si substrate. the results are similar to those of the ben process, which supports the ion-bombardment-enhanced-nucleation mechanism. the formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. the ion-bombarded si is expected to enhance the cvd diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (c) 2001 american institute of physics.
WOS关键词BIAS-ENHANCED NUCLEATION ; CHEMICAL-VAPOR-DEPOSITION ; BEAM DEPOSITION ; MECHANISM ; SILICON ; SPECTROSCOPY
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000166644400071
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429096
专题半导体研究所
通讯作者Liao, MY
作者单位1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Liao, MY,Qin, FG,Zhang, JH,et al. Ion bombardment as the initial stage of diamond film growth[J]. Journal of applied physics,2001,89(3):1983-1985.
APA Liao, MY.,Qin, FG.,Zhang, JH.,Liu, ZK.,Yang, SY.,...&Lee, ST.(2001).Ion bombardment as the initial stage of diamond film growth.Journal of applied physics,89(3),1983-1985.
MLA Liao, MY,et al."Ion bombardment as the initial stage of diamond film growth".Journal of applied physics 89.3(2001):1983-1985.

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来源:半导体研究所

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