Fe-diffusion-induced defects in inp annealed in iron phosphide ambient
文献类型：期刊论文
| 作者 | Zhao, YW; Dong, HW; Jiao, JH; Zhao, JQ; Lin, LY |
| 刊名 | Japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2002-04-01 |
| 卷号 | 41期号:4a页码:1929-1931 |
| 关键词 | Indium phosphide Annealing Semi-insulating Defect Diffusion |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.41.1929 |
| 通讯作者 | Zhao, yw() |
| 英文摘要 | Photoluminescence (pl) and photo induced current transient spectroscopy (picts) have been used to study deep levels in semi-insulating (si) inp prepared by annealing undoped inp in pure phosphorus (pp) and iron phosphide (ip) ambient. defects are much fewer in ip si-inp than in pp si-inp. deep-level-related pl emission could only be detected in ip si-inp. the results indicate that fe diffusion inhibits the thermal formation of a number of defects in annealed inp. a complex defect has been formed in the annealing process in the presence of fe. |
| WOS关键词 | ENCAPSULATED CZOCHRALSKI INP ; SEMIINSULATING INP ; PHOTO-LUMINESCENCE ; INDIUM-PHOSPHIDE ; UNDOPED INP ; PHOTOLUMINESCENCE ; CRYSTALS ; PRESSURE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000175703100005 |
| 出版者 | INST PURE APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429098 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, YW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, HW,Jiao, JH,et al. Fe-diffusion-induced defects in inp annealed in iron phosphide ambient[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,2002,41(4a):1929-1931. |
| APA | Zhao, YW,Dong, HW,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Fe-diffusion-induced defects in inp annealed in iron phosphide ambient.Japanese journal of applied physics part 1-regular papers short notes & review papers,41(4a),1929-1931. |
| MLA | Zhao, YW,et al."Fe-diffusion-induced defects in inp annealed in iron phosphide ambient".Japanese journal of applied physics part 1-regular papers short notes & review papers 41.4a(2002):1929-1931. |
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来源：半导体研究所
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