中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on pollution for the photoelectronic material inp

文献类型:期刊论文

作者Xu, JC; Ding, XP; Chen, DQ
刊名Spectroscopy and spectral analysis
出版日期2002-08-01
卷号22期号:4页码:550-551
关键词Mass spectrum analysis Photoluminescence Electron concentration Electron mobility
ISSN号1000-0593
通讯作者Xu, jc()
英文摘要The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material inp were given. the hall coefficient, charge carrier concentration and hall mobility were determined. experimental results indicate that the pollution of silicon is predominant.
WOS研究方向Spectroscopy
WOS类目Spectroscopy
语种英语
WOS记录号WOS:000177804700007
出版者BEIJING UNIV PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429112
专题半导体研究所
通讯作者Xu, JC
作者单位1.Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China
2.Acad Sinica, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xu, JC,Ding, XP,Chen, DQ. Study on pollution for the photoelectronic material inp[J]. Spectroscopy and spectral analysis,2002,22(4):550-551.
APA Xu, JC,Ding, XP,&Chen, DQ.(2002).Study on pollution for the photoelectronic material inp.Spectroscopy and spectral analysis,22(4),550-551.
MLA Xu, JC,et al."Study on pollution for the photoelectronic material inp".Spectroscopy and spectral analysis 22.4(2002):550-551.

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来源:半导体研究所

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