Study on pollution for the photoelectronic material inp
文献类型:期刊论文
作者 | Xu, JC; Ding, XP; Chen, DQ |
刊名 | Spectroscopy and spectral analysis
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出版日期 | 2002-08-01 |
卷号 | 22期号:4页码:550-551 |
关键词 | Mass spectrum analysis Photoluminescence Electron concentration Electron mobility |
ISSN号 | 1000-0593 |
通讯作者 | Xu, jc() |
英文摘要 | The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material inp were given. the hall coefficient, charge carrier concentration and hall mobility were determined. experimental results indicate that the pollution of silicon is predominant. |
WOS研究方向 | Spectroscopy |
WOS类目 | Spectroscopy |
语种 | 英语 |
WOS记录号 | WOS:000177804700007 |
出版者 | BEIJING UNIV PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429112 |
专题 | 半导体研究所 |
通讯作者 | Xu, JC |
作者单位 | 1.Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China 2.Acad Sinica, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, JC,Ding, XP,Chen, DQ. Study on pollution for the photoelectronic material inp[J]. Spectroscopy and spectral analysis,2002,22(4):550-551. |
APA | Xu, JC,Ding, XP,&Chen, DQ.(2002).Study on pollution for the photoelectronic material inp.Spectroscopy and spectral analysis,22(4),550-551. |
MLA | Xu, JC,et al."Study on pollution for the photoelectronic material inp".Spectroscopy and spectral analysis 22.4(2002):550-551. |
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来源:半导体研究所
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