Photoluminescence of te isoelectronic traps in znsete/znse quantum wells under hydrostatic pressure
文献类型：期刊论文
| 作者 | Fang, ZL; Li, GH; Han, HX; Ding, K; Chen, Y; Peng, CL; Yuan, SX |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2002-02-01 |
| 卷号 | 21期号:1页码:28-32 |
| 关键词 | Te isoelectronic traps Pressure Photoluminescence |
| ISSN号 | 1001-9014 |
| 通讯作者 | Fang, zl() |
| 英文摘要 | The photoluminescence (pl) of znse0.92ted0.08/znse superlattice quantum wells at 77k under hydrostatic pressure up to 7.8 gpa was studied. strong pl peaks from excitons trapped in isoelectronic traps in znse0.92te0.08 were observed. it was found that the pressure coefficients of the pl, peaks from te traps are about half of that of znse. it demonstrates the localized characteristic of the potential of te isoelectronic. traps. the excitons transition between te traps in znse1 te-- x(x) and (cdse)(1) /(znse)(3) superlattice was also investigated. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; ZNSE1-XTEX ; ALLOYS ; EMISSION ; CENTERS ; BEHAVIOR |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000174105800007 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429114 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fang, ZL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fang, ZL,Li, GH,Han, HX,et al. Photoluminescence of te isoelectronic traps in znsete/znse quantum wells under hydrostatic pressure[J]. Journal of infrared and millimeter waves,2002,21(1):28-32. |
| APA | Fang, ZL.,Li, GH.,Han, HX.,Ding, K.,Chen, Y.,...&Yuan, SX.(2002).Photoluminescence of te isoelectronic traps in znsete/znse quantum wells under hydrostatic pressure.Journal of infrared and millimeter waves,21(1),28-32. |
| MLA | Fang, ZL,et al."Photoluminescence of te isoelectronic traps in znsete/znse quantum wells under hydrostatic pressure".Journal of infrared and millimeter waves 21.1(2002):28-32. |
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来源：半导体研究所
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