Statistical investigation on morphology development of gallium nitride in initial growth stage
文献类型：期刊论文
| 作者 | Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:77-84 |
| 关键词 | Atomic force microscopy Crystal morphology Organic vapor phase epitaxy Nitrides |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, dc() |
| 英文摘要 | Morphology of gallium nitride (gan) in initial growth stage was observed with atomic force microscopy (afm) and scanning electron microscopy (sem), it was found that the epilayer developed from islands to coalesced film. statistics based on afm observation was carried out to investigate the morphology characteristics. it was found that the evolution of height distribution could be used to describe morphology development. statistics also clearly revealed variation of top-face growth rate among islands. indium-doping effect on morphology development was also statistically studied. the roughening and smoothing behavior in morphology development was explained. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; AIN BUFFER LAYER ; GAN ; SAPPHIRE ; ALN ; EPITAXY ; MOVPE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000172034400010 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429115 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, DC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat & Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yuan, HR,Lu, DC,Liu, XL,et al. Statistical investigation on morphology development of gallium nitride in initial growth stage[J]. Journal of crystal growth,2002,234(1):77-84. |
| APA | Yuan, HR.,Lu, DC.,Liu, XL.,Chen, Z.,Han, P.,...&Wang, D.(2002).Statistical investigation on morphology development of gallium nitride in initial growth stage.Journal of crystal growth,234(1),77-84. |
| MLA | Yuan, HR,et al."Statistical investigation on morphology development of gallium nitride in initial growth stage".Journal of crystal growth 234.1(2002):77-84. |
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来源：半导体研究所
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