Improved purity of long-wavelength inassb epilayers grown by melt epitaxy in fused silica boats
文献类型：期刊论文
| 作者 | Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:85-90 |
| 关键词 | Purification X-ray diffraction Melt epitaxy Narrow gap materials Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Yamaguchi, t() |
| 英文摘要 | In this study, we first present the process of the melt epitaxial (me) growth method, and the improvement of low-temperature electron mobility of the long-wavelength inassb epilayers grown by me in a fused silica boat. the electrical properties were investigated by van der pauw measurement at 300 and 77 k. it is seen that the electron mobility of the inassb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/v s when the temperature was reduced from 300 to 77 k, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 k to 54,400 cm(2)/v s at 77 k. the electron mobility of 54,400cm(2)/vs is the best result, so far, for the inassb materials with cutoff wavelength of 8-12 mum at 77 k. this may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | CUTOFF WAVELENGTH ; SINGLE-CRYSTALS ; MU-M ; INFRARED PHOTODETECTORS ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000172034400011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429116 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yamaguchi, T |
| 作者单位 | 1.Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan 2.Hamamatsu Photon KK, Cent Res Lab, Hamakita 434, Japan 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, YZ,Kan, H,Gao, FS,et al. Improved purity of long-wavelength inassb epilayers grown by melt epitaxy in fused silica boats[J]. Journal of crystal growth,2002,234(1):85-90. |
| APA | Gao, YZ,Kan, H,Gao, FS,Gong, XY,&Yamaguchi, T.(2002).Improved purity of long-wavelength inassb epilayers grown by melt epitaxy in fused silica boats.Journal of crystal growth,234(1),85-90. |
| MLA | Gao, YZ,et al."Improved purity of long-wavelength inassb epilayers grown by melt epitaxy in fused silica boats".Journal of crystal growth 234.1(2002):85-90. |
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来源：半导体研究所
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