Room-temperature, ground-state lasing for red-emitting vertically aligned inalas/algaas quantum dots grown on a gaas(100) substrate
文献类型：期刊论文
| 作者 | Liu, HY; Sellers, IR; Airey, RJ; Steer, MJ; Houston, PA; Mowbray, DJ; Cockburn, J; Skolnick, MS; Xu, B; Wang, ZG |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2002-05-20 |
| 卷号 | 80期号:20页码:3769-3771 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1481245 |
| 通讯作者 | Liu, hy() |
| 英文摘要 | The effect of the growth temperature on the properties of inalas/algaas quantum dots grown on gaas(100) substrates is investigated. the optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesc. the improvements of inalas/algaas quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-iii vacancies. furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesc have been fabricated. lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 ka/cm(2), significantly better than previously reported values for this quantum-dot systems. (c) 2002 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; HIGH-POWER ; LASER-DIODES ; NM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000175564100035 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429118 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, HY |
| 作者单位 | 1.Univ Sheffield, Dept Elect & Elect Engn, EPSRC, Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England |
| 推荐引用方式 GB/T 7714 | Liu, HY,Sellers, IR,Airey, RJ,et al. Room-temperature, ground-state lasing for red-emitting vertically aligned inalas/algaas quantum dots grown on a gaas(100) substrate[J]. Applied physics letters,2002,80(20):3769-3771. |
| APA | Liu, HY.,Sellers, IR.,Airey, RJ.,Steer, MJ.,Houston, PA.,...&Wang, ZG.(2002).Room-temperature, ground-state lasing for red-emitting vertically aligned inalas/algaas quantum dots grown on a gaas(100) substrate.Applied physics letters,80(20),3769-3771. |
| MLA | Liu, HY,et al."Room-temperature, ground-state lasing for red-emitting vertically aligned inalas/algaas quantum dots grown on a gaas(100) substrate".Applied physics letters 80.20(2002):3769-3771. |
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来源：半导体研究所
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