Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating inp wafers
文献类型：期刊论文
| 作者 | Zhao, YW; Sun, NF; Dong, HW; Jiao, JH; Zhao, JQ; Sun, TN; Lin, LY |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2002-04-30 |
| 卷号 | 91页码:521-524 |
| 关键词 | Indium phosphide Semi-insulating Annealing Picts Photoluminescence |
| ISSN号 | 0921-5107 |
| 通讯作者 | Sun, nf() |
| 英文摘要 | Semi-insulating (si) inp wafers of 2 and 3 in. diameters have been prepared by annealing undoped lec inp at 930 degreesc for 80 h under pure phosphorus ambient (pp) and iron phosphide ambient (ip). the electrical uniformity of annealed undoped si wafers, along with a fe-doped as-grown si lec inp wafer, has been characterized by whole wafer pl mapping and radial hall measurements. defects in these wafers have been detected by photo-induced current transient spectroscopy (picts). the results indicated that the uniformity of ip wafer is much better than that of pp wafer and as-grown fe-doped si inp wafer. there are fewer traps in undoped si inp ip wafer than in as grown fe-doped and undoped si inp pp wafer, as evidenced by picts. the good uniformity of the ip wafer is related to the nonexistence of high concentration of thermally induced defects. the mechanism for this phenomenon is discussed based on the results. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | SEMIINSULATING INP ; INDIUM-PHOSPHIDE ; FE ; PHOTOLUMINESCENCE ; TEMPERATURE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000174864400112 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429134 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, NF |
| 作者单位 | 1.Hebei Semicond Res Inst, Shijiazhuang 050002, Hebei, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Sun, NF,Dong, HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating inp wafers[J]. Materials science and engineering b-solid state materials for advanced technology,2002,91:521-524. |
| APA | Zhao, YW.,Sun, NF.,Dong, HW.,Jiao, JH.,Zhao, JQ.,...&Lin, LY.(2002).Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating inp wafers.Materials science and engineering b-solid state materials for advanced technology,91,521-524. |
| MLA | Zhao, YW,et al."Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating inp wafers".Materials science and engineering b-solid state materials for advanced technology 91(2002):521-524. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。