Preparation and structural properties for gan films grown on si (111) by annealing
文献类型：期刊论文
| 作者 | Yang, YG; Ma, HL; Xue, CS; Zhuang, HZ; Hao, XT; Ma, J; Teng, SY |
| 刊名 | Applied surface science
 |
| 出版日期 | 2002-06-05 |
| 卷号 | 193期号:1-4页码:254-260 |
| 关键词 | Gallium nitride films Annealing R.f. magnetron sputtering |
| ISSN号 | 0169-4332 |
| 通讯作者 | Yang, yg() |
| 英文摘要 | High quality gan films were prepared by annealing sputtered ga2o3 films under flowing ammonia. ga2o3 films were deposited on si (1 1 1) substrates by r.f. magnetron sputtering. x-ray diffractorneter (xrd) and x-ray photoelectron spectroscopy (xps) measurement results indicate that the polycrystalline gan with hexagonal structure was successfully grown on, the si (1 1 1) substrate. the surface morphology of the gan films was examined by atomic force microscopy (afm) and scanning electron microscopy (sem). varying the annealing temperature and time was found to have great effect on the grain size. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GALLIUM NITRIDE ; SUBSTRATE |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000177240300030 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429135 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, YG |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 3.Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, YG,Ma, HL,Xue, CS,et al. Preparation and structural properties for gan films grown on si (111) by annealing[J]. Applied surface science,2002,193(1-4):254-260. |
| APA | Yang, YG.,Ma, HL.,Xue, CS.,Zhuang, HZ.,Hao, XT.,...&Teng, SY.(2002).Preparation and structural properties for gan films grown on si (111) by annealing.Applied surface science,193(1-4),254-260. |
| MLA | Yang, YG,et al."Preparation and structural properties for gan films grown on si (111) by annealing".Applied surface science 193.1-4(2002):254-260. |
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来源：半导体研究所
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