Metalorganic chemical vapor deposition of ganas alloys using different ga precursors
文献类型：期刊论文
| 作者 | Wei, X; Wang, GH; Zhang, GZ; Zhu, XP; Ma, XY; Chen, LH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-03-01 |
| 卷号 | 236期号:4页码:516-522 |
| 关键词 | High resolution x-ray diffraction Precursor Metalorganic chemical vapor depositions Gallium compounds |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wei, x() |
| 英文摘要 | The ganas alloys have been grown by metalorganic chemical vapor deposition (mocvd) using dimethylhydrazine (dmhv) as the nitrogen precursor, triethylgallium (tega) and trimethylgallium (tmga) as the gallium precursors, respectively. both symmetric (004) and asymmetric (1 1 5) high-resolution x-ray diffraction (hrxrd) were used to determine the nitrogen content in ganas layers. secondary ion mass spectrometry (sims) was used to obtain the impurity content. t e influence of different ga precursors on ganas quality has been investigated. phase separation is observed in the < 1 1 5 > direction when using tmga as the ga precursor but not observed when using tega. this phenomenon should originate from the parasitic reaction between the ga and n precursors. furthermore. samples grown with tega have better quality and less impurity contamination than those with tmga. nitrogen content of 5.742% has been achieved using tega and no phase separation observed in the sample. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | LASER-DIODES ; SOLAR-CELLS ; BAND-GAP ; GAINNAS ; DIMETHYLHYDRAZINE ; GROWTH ; PYROLYSIS ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000175323200003 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429146 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, X |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, X,Wang, GH,Zhang, GZ,et al. Metalorganic chemical vapor deposition of ganas alloys using different ga precursors[J]. Journal of crystal growth,2002,236(4):516-522. |
| APA | Wei, X,Wang, GH,Zhang, GZ,Zhu, XP,Ma, XY,&Chen, LH.(2002).Metalorganic chemical vapor deposition of ganas alloys using different ga precursors.Journal of crystal growth,236(4),516-522. |
| MLA | Wei, X,et al."Metalorganic chemical vapor deposition of ganas alloys using different ga precursors".Journal of crystal growth 236.4(2002):516-522. |
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来源：半导体研究所
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