A novel contactless method for characterization of semiconductors: surface electron beam induced voltage in scanning electron microscopy
文献类型：期刊论文
| 作者 | Zhu, SQ; Rau, EI; Yang, FH; Zheng, HZ |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2002-09-01 |
| 卷号 | 19期号:9页码:1329-1332 |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhu, sq() |
| 英文摘要 | We present a novel contactless and nondestructive method called the surface electron beam induced voltage (sebiv) method for characterizing semiconductor materials and devices. the sebiv method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (sem). the core part of the sebiv detection set-up is a circular metal detector placed above the sample surface. the capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64 pf it is large enough for the detection of the induced surface potential. the irradiation mode of electron beam (e-beam) influences the signal generation. when the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. the real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. the polarity of induced potential depends on the structure of potential barriers and surface states of samples. the contrast of sebiv images in sem changes with irradiation time and e-beam intensity. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000178088500035 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429154 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, SQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia |
| 推荐引用方式 GB/T 7714 | Zhu, SQ,Rau, EI,Yang, FH,et al. A novel contactless method for characterization of semiconductors: surface electron beam induced voltage in scanning electron microscopy[J]. Chinese physics letters,2002,19(9):1329-1332. |
| APA | Zhu, SQ,Rau, EI,Yang, FH,&Zheng, HZ.(2002).A novel contactless method for characterization of semiconductors: surface electron beam induced voltage in scanning electron microscopy.Chinese physics letters,19(9),1329-1332. |
| MLA | Zhu, SQ,et al."A novel contactless method for characterization of semiconductors: surface electron beam induced voltage in scanning electron microscopy".Chinese physics letters 19.9(2002):1329-1332. |
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来源：半导体研究所
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