中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 半导体研究所
In situ doping of 3c-sic grown on (0001) sapphire substrates by lpcvd

文献类型：期刊论文

作者Sun, GS; Luo, MC; Wang, L; Zhu, SR; Li, JM; Zeng, YP; Lin, LY
刊名Silicon carbide and related materials 2001, pts 1 and 2, proceedings
出版日期2002
卷号389-3页码:339-342
关键词3c-sic In-situ doping Low-pressure cvd Sapphire substrate
ISSN号0255-5476
通讯作者Sun, gs()
英文摘要The heteroepitaxial growth of n-type and p-type 3c-sic on (0001) sapphire substrates has been performed with a supply of sih4+c2h4+h-2 system by introducing ammonia (nh3) and diborane (b2h6) precursors, respectively, into gas mixtures. intentionally incorporated nitrogen impurity levels were affected by changing the si/c ratio within the growth reactor. as an acceptor, boron can be added uniformly into the growing 3c-sic epilayers. nitrogen-doped 3c-sic epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; COMPETITION EPITAXY
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
语种英语
WOS记录号WOS:000177321100081
出版者TRANS TECH PUBLICATIONS LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2429156
专题半导体研究所
通讯作者Sun, GS
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Sun, GS,Luo, MC,Wang, L,et al. In situ doping of 3c-sic grown on (0001) sapphire substrates by lpcvd[J]. Silicon carbide and related materials 2001, pts 1 and 2, proceedings,2002,389-3:339-342.
APA Sun, GS.,Luo, MC.,Wang, L.,Zhu, SR.,Li, JM.,...&Lin, LY.(2002).In situ doping of 3c-sic grown on (0001) sapphire substrates by lpcvd.Silicon carbide and related materials 2001, pts 1 and 2, proceedings,389-3,339-342.
MLA Sun, GS,et al."In situ doping of 3c-sic grown on (0001) sapphire substrates by lpcvd".Silicon carbide and related materials 2001, pts 1 and 2, proceedings 389-3(2002):339-342.

入库方式： iSwitch采集

来源：半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。