Surface morphology of ion-beam deposited carbon films under high temperature
文献类型：期刊论文
| 作者 | Liao, MY; Chai, CL; Yang, SY; Liu, ZK; Qin, FG; Wang, ZG |
| 刊名 | Journal of vacuum science & technology a-vacuum surfaces and films
 |
| 出版日期 | 2002-11-01 |
| 卷号 | 20期号:6页码:2072-2074 |
| ISSN号 | 0734-2101 |
| DOI | 10.1116/1.1517996 |
| 通讯作者 | Liao, my() |
| 英文摘要 | Carbon films with an open-ended structure were obtained by mass-selected ion-beam deposition technique at 800degreesc. raman spectra show that these films are mainly sp(2)-bonded. in our case, threshold ion energy of 140 ev was found for the formation of such surface morphology. high deposition temperature and ion-beam current density are also responsible for the growth of this structure. additionally, the growth mechanism of the carbon films is discussed in this article. it was found that the ions sputtered pits on the substrate in the initial stage play a key role in the tubular surface morphology. (c) 2002 american vacuum society. |
| WOS关键词 | ENERGY ; NANOTUBES ; SILICON ; GROWTH |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Coatings & Films ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000179441700038 |
| 出版者 | A V S AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429160 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liao, MY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liao, MY,Chai, CL,Yang, SY,et al. Surface morphology of ion-beam deposited carbon films under high temperature[J]. Journal of vacuum science & technology a-vacuum surfaces and films,2002,20(6):2072-2074. |
| APA | Liao, MY,Chai, CL,Yang, SY,Liu, ZK,Qin, FG,&Wang, ZG.(2002).Surface morphology of ion-beam deposited carbon films under high temperature.Journal of vacuum science & technology a-vacuum surfaces and films,20(6),2072-2074. |
| MLA | Liao, MY,et al."Surface morphology of ion-beam deposited carbon films under high temperature".Journal of vacuum science & technology a-vacuum surfaces and films 20.6(2002):2072-2074. |
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来源：半导体研究所
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