Strain relaxation of inp film directly grown on gaas patterned compliant substrate
文献类型：期刊论文
| 作者 | Zhang, ZC; Yang, SY; Zhang, FQ; Li, DB; Chen, YH; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-08-01 |
| 卷号 | 243期号:1页码:71-76 |
| 关键词 | Dislocation Strain Molecular beam epitaxy Organometallic vapor phase epitaxy Semiconductor iii-v materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, zc() |
| 英文摘要 | In order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant substrate method has been introduced, which has overcome the disadvantages of previously published methods. inp film of thickness 800 nm was directly grown on this substrate. scanning electron microscopy (sem) has shown that good surface morphology has been obtained. in addition, photoluminescence (pl) and double crystal x-ray diffraction (dcxrd) study have shown that the residual strain has been reduced, and that the structure quality has been improved. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | CRITICAL THICKNESS ; HETEROEPITAXIAL GROWTH ; LAYERS ; OXIDATION ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000178476600011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429161 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Yang, SY,Zhang, FQ,et al. Strain relaxation of inp film directly grown on gaas patterned compliant substrate[J]. Journal of crystal growth,2002,243(1):71-76. |
| APA | Zhang, ZC,Yang, SY,Zhang, FQ,Li, DB,Chen, YH,&Wang, ZG.(2002).Strain relaxation of inp film directly grown on gaas patterned compliant substrate.Journal of crystal growth,243(1),71-76. |
| MLA | Zhang, ZC,et al."Strain relaxation of inp film directly grown on gaas patterned compliant substrate".Journal of crystal growth 243.1(2002):71-76. |
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来源：半导体研究所
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