Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers
文献类型：期刊论文
| 作者 | Leung, BH; Chan, NH; Fong, WK; Zhu, CF; Ng, SW; Lui, HF; Tong, KY; Surya, C; Lu, LW; Ge, WK |
| 刊名 | Ieee transactions on electron devices
 |
| 出版日期 | 2002-02-01 |
| 卷号 | 49期号:2页码:314-318 |
| 关键词 | Deep level transient fourier spectroscopy (dltfs) Gallium nitride (gan) Intermediate-temperature buffer layer (itbf) Low-frequency noise |
| ISSN号 | 0018-9383 |
| 通讯作者 | Leung, bh() |
| 英文摘要 | Gallium nitride (gan)-based schottky junctions were fabricated by rf-plasma-assisted molecular beam epitaxy (mbe). the gan epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (ltbl) grown at 500 degreesc and an intermediate-temperature buffer layer (itbl) deposited at 690 degreesc. low-frequency excess noise and deep level transient fourier spectroscopy (dltfs) were measured from the devices. the results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the gan films grown with an itbl. compared to the control sample, which was grown with just a conventional ltbl, a three-order-of-magnitude reduction in the deep levels 0.4 ev below the conduction band minimum (ec) is observed in the bulk of the thin films using dltfs measurements. |
| WOS关键词 | RESONANT-TUNNELING DIODES ; GENERATION-RECOMBINATION NOISE ; RANDOM-TELEGRAPH NOISE ; ULTRAVIOLET PHOTODETECTORS ; DEVICES |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000173613700015 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429165 |
| 专题 | 半导体研究所 |
| 通讯作者 | Leung, BH |
| 作者单位 | 1.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Leung, BH,Chan, NH,Fong, WK,et al. Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers[J]. Ieee transactions on electron devices,2002,49(2):314-318. |
| APA | Leung, BH.,Chan, NH.,Fong, WK.,Zhu, CF.,Ng, SW.,...&Ge, WK.(2002).Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers.Ieee transactions on electron devices,49(2),314-318. |
| MLA | Leung, BH,et al."Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers".Ieee transactions on electron devices 49.2(2002):314-318. |
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来源：半导体研究所
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