Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown gan using selective etching
文献类型：期刊论文
| 作者 | Feng, G; Zheng, XH; Fu, Y; Zhu, JJ; Shen, XM; Zhang, BS; Zhao, DG; Wang, YT; Yang, H; Liang, JW |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-05-01 |
| 卷号 | 240期号:3-4页码:368-372 |
| 关键词 | X-ray diffraction Etching Metalorganic vapor-phase epitaxy Nitrides Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Feng, g() |
| 英文摘要 | The crystallographic tilt of the lateral epitaxial overgrown (leo) gan on sapphire substrate with sinx mask is investiaated by double crystal x-ray diffraction. two wing peaks beside the gan 0002 peak can be observed for the as-grown leo gan. during the selective etching of sinx mask, each wing peak splits into two peaks, one of which disappears as the mask is removed, while the other remains unchanged. this indicates that the crystallographic tilt of the overgrown region is caused not only by the plastic deformation resulted from the bending of threading dislocations, but by the non-uniformity elastic deformation related with the gan, sinx interfacial forces. the widths of these two peaks are also studied in this paper. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; FILMS ; DISLOCATIONS ; DENSITY ; GROWTH ; LAYERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000175912000006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429173 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, G |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, G,Zheng, XH,Fu, Y,et al. Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown gan using selective etching[J]. Journal of crystal growth,2002,240(3-4):368-372. |
| APA | Feng, G.,Zheng, XH.,Fu, Y.,Zhu, JJ.,Shen, XM.,...&Liang, JW.(2002).Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown gan using selective etching.Journal of crystal growth,240(3-4),368-372. |
| MLA | Feng, G,et al."Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown gan using selective etching".Journal of crystal growth 240.3-4(2002):368-372. |
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来源：半导体研究所
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