Dielectric properties of bi2ti2o7 films grown on si(100) substrate by apmocvd
文献类型：期刊论文
| 作者 | Wang, H; Shang, SX; Yao, WF; Hou, Y; Xu, XH; Wang, D; Wang, M; Yu, JZ |
| 刊名 | Ferroelectrics
 |
| 出版日期 | 2002 |
| 卷号 | 271页码:1707-1713 |
| 关键词 | Bi2ti2o7 Thin film Mocvd (111) orientation |
| ISSN号 | 0015-0193 |
| 通讯作者 | Wang, h() |
| 英文摘要 | The growth of bi2ti2o7 films with (111) orientation on si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(apmocvd) technique at 480similar to550 degreesc is presented. the films were characterized by x-ray diffraction analysis, atomic force microscopy and electron diffraction. the results show high quality bi2ti2o7 films with smooth shinning surface. the dielectric properties and c-v characterization of the films were studied. the dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. the charge storage density was 31.9fc/mum(2). the resistivity is higher than 1x10(12) omega. .cm under the applied voltage of 5v. the bi2ti2o7 films are suitable to be used as a new insulating gate material in dynamic random access memory (dram). |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; CRYSTAL THIN-FILMS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000177216700021 |
| 出版者 | TAYLOR & FRANCIS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429175 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, H |
| 作者单位 | 1.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China 2.Shandong Univ, Dept Environm Engn, Jinan 250100, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, H,Shang, SX,Yao, WF,et al. Dielectric properties of bi2ti2o7 films grown on si(100) substrate by apmocvd[J]. Ferroelectrics,2002,271:1707-1713. |
| APA | Wang, H.,Shang, SX.,Yao, WF.,Hou, Y.,Xu, XH.,...&Yu, JZ.(2002).Dielectric properties of bi2ti2o7 films grown on si(100) substrate by apmocvd.Ferroelectrics,271,1707-1713. |
| MLA | Wang, H,et al."Dielectric properties of bi2ti2o7 films grown on si(100) substrate by apmocvd".Ferroelectrics 271(2002):1707-1713. |
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来源：半导体研究所
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