Depth dependence of the tetragonal distortion of a gan layer on si(111) studied by rutherford backscattering/channeling
文献类型：期刊论文
| 作者 | Wu, MF; Chen, CC; Zhu, DZ; Zhou, SQ; Vantomme, A; Langouche, G; Zhang, BS; Yang, H |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2002-06-03 |
| 卷号 | 80期号:22页码:4130-4132 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1483389 |
| 通讯作者 | Wu, mf() |
| 英文摘要 | Rutherford backscattering and channeling have been used to characterize the structure of a gan layer grown on a si(111) substrate. the results show that a 1.26 mum gan epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a si(111) substrate. using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the gan layer, the tetragonal distortion e(t), which is caused by the elastic strain in the epilayer, can be determined. moreover, the depth dependence of the e(t) can be obtained using this technique. a fully relaxed (e(t)=0) gan layer for a thickness <2.8 mum is expected. (c) 2002 american institute of physics. |
| WOS关键词 | X-RAY-DIFFRACTION ; ELASTIC STRAIN ; INGAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000175771800016 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429177 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, MF |
| 作者单位 | 1.Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China 2.Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium 3.Chinese Acad Sci, Shanghai Inst Nucl Res, Lab Nucl Anal & Tech, Shanghai 201800, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, MF,Chen, CC,Zhu, DZ,et al. Depth dependence of the tetragonal distortion of a gan layer on si(111) studied by rutherford backscattering/channeling[J]. Applied physics letters,2002,80(22):4130-4132. |
| APA | Wu, MF.,Chen, CC.,Zhu, DZ.,Zhou, SQ.,Vantomme, A.,...&Yang, H.(2002).Depth dependence of the tetragonal distortion of a gan layer on si(111) studied by rutherford backscattering/channeling.Applied physics letters,80(22),4130-4132. |
| MLA | Wu, MF,et al."Depth dependence of the tetragonal distortion of a gan layer on si(111) studied by rutherford backscattering/channeling".Applied physics letters 80.22(2002):4130-4132. |
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来源：半导体研究所
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