Crystallographic tilt in gan layers grown by epitaxial lateral overgrowth
文献类型：期刊论文
| 作者 | Feng, G; Zheng, XH; Zhu, JJ; Shen, XM; Zhang, BS; Zhao, DG; Sun, YP; Zhang, ZH; Wang, YT; Yang, H |
| 刊名 | Science in china series a-mathematics physics astronomy
 |
| 出版日期 | 2002-11-01 |
| 卷号 | 45期号:11页码:1461-1467 |
| ISSN号 | 1006-9283 |
| 关键词 | Gan Epitaxial lateral overgrowth Crystallographic tilt Double crystal x-ray diffraction |
| 通讯作者 | Feng, g() |
| 英文摘要 | The crystallographic tilt in gan layers grown by epitaxial lateral overgrowth (elo) on sapphire (0001) substrates was investigated by using double crystal x-ray diffraction (dc-xrd). it was found that elo gan stripes bent towards the sinx mask in the direction perpendicular to seeding lines. each side of gan (0002) peak in dc-xrd rocking curves was a broad peak related with the crystallographic tilt. this broad peak split into two peaks (denoted as a and b), and peak b disappeared gradually when the mask began to be removed by selective etching. only narrow peak a remained when the sinx mask was removed completely. a model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: one is the non-uniformity elastic deformation caused by the interphase force between the elo gan layer and the sinx mask. the other is the plastic deformation, which is attributed to the change of the threading dislocations (tds)-from vertical in the window regions to the lateral in the regions over the mask. |
| WOS关键词 | FILMS ; DEFECTS ; GAAS |
| WOS研究方向 | Mathematics |
| WOS类目 | Mathematics, Applied ; Mathematics |
| 语种 | 英语 |
| 出版者 | SCIENCE CHINA PRESS |
| WOS记录号 | WOS:000179209500012 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429191 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, G |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, G,Zheng, XH,Zhu, JJ,et al. Crystallographic tilt in gan layers grown by epitaxial lateral overgrowth[J]. Science in china series a-mathematics physics astronomy,2002,45(11):1461-1467. |
| APA | Feng, G.,Zheng, XH.,Zhu, JJ.,Shen, XM.,Zhang, BS.,...&Liang, JW.(2002).Crystallographic tilt in gan layers grown by epitaxial lateral overgrowth.Science in china series a-mathematics physics astronomy,45(11),1461-1467. |
| MLA | Feng, G,et al."Crystallographic tilt in gan layers grown by epitaxial lateral overgrowth".Science in china series a-mathematics physics astronomy 45.11(2002):1461-1467. |
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来源：半导体研究所
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