Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry
文献类型：期刊论文
| 作者 | Ye, XL; Chen, YH; Xu, B; Wang, ZG |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2002-04-30 |
| 卷号 | 91页码:62-65 |
| 关键词 | Reflectance-difference spectroscopy Indium segregation Ingaas/gaas quantum wells |
| ISSN号 | 0921-5107 |
| 通讯作者 | Chen, yh() |
| 英文摘要 | The influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | EPITAXY-GROWN INGAAS/GAAS ; SURFACE SEGREGATION ; INTERFACE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000174864400014 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429192 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, YH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, XL,Chen, YH,Xu, B,et al. Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry[J]. Materials science and engineering b-solid state materials for advanced technology,2002,91:62-65. |
| APA | Ye, XL,Chen, YH,Xu, B,&Wang, ZG.(2002).Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry.Materials science and engineering b-solid state materials for advanced technology,91,62-65. |
| MLA | Ye, XL,et al."Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry".Materials science and engineering b-solid state materials for advanced technology 91(2002):62-65. |
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来源：半导体研究所
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