Modulation spectroscopy of gaas covered by inas quantum dots
文献类型：期刊论文
| 作者 | Jin, P; Meng, XQ; Zhang, ZY; Li, CM; Qu, SC; Xu, B; Liu, FQ; Wang, ZG; Li, YG; Zhang, CZ |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2002-07-01 |
| 卷号 | 19期号:7页码:1010-1012 |
| ISSN号 | 0256-307X |
| 通讯作者 | Jin, p() |
| 英文摘要 | Contactless: electroreflectance has been employed at room temperature to study the fermi level pinning at undoped-n(+) gaas surfaces covered by 1.6 and 1.8 monolayer (ml) inas quantum dots (qds). it is shown that the 1.8 ml inas qd moves the fermi level at gaas surface to the valence band maximum by about 70 mev compared to bare gaas, whereas 1.6 ml inas on gaas does not modify the fermi level, it is confirmed that the modification of the 1.8 ml inas deposition on the fermi level at gaas surface is due to the qds, which are surrounded by some oxidized inas facets, rather than the wetting layer. |
| WOS关键词 | FRANZ-KELDYSH OSCILLATIONS ; MICROSCOPY ; SURFACES ; ISLANDS ; LAYER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000177137900040 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429193 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jin, P |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, P,Meng, XQ,Zhang, ZY,et al. Modulation spectroscopy of gaas covered by inas quantum dots[J]. Chinese physics letters,2002,19(7):1010-1012. |
| APA | Jin, P.,Meng, XQ.,Zhang, ZY.,Li, CM.,Qu, SC.,...&Pan, SH.(2002).Modulation spectroscopy of gaas covered by inas quantum dots.Chinese physics letters,19(7),1010-1012. |
| MLA | Jin, P,et al."Modulation spectroscopy of gaas covered by inas quantum dots".Chinese physics letters 19.7(2002):1010-1012. |
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来源：半导体研究所
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