Gdxsi grown with mass-analyzed low energy dual ion beam epitaxy technique
文献类型：期刊论文
| 作者 | Zhou, JP; Chen, NF; Zhang, FQ; Song, SL; Chai, CL; Yang, SY; Liu, ZK; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-07-01 |
| 卷号 | 242期号:3-4页码:389-394 |
| 关键词 | Auger electron spectroscopy X-ray diffraction X-ray photoelectron spectroscopy Ion beam epitaxy Semiconducting gadolinium silicide |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhou, jp() |
| 英文摘要 | Semiconducting gadolinium silicide gdxsi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick gdxsi film. x-ray double-crystal diffraction measurement shows that there is no new phase formed. the xps spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal gd and gd2o3. all of these results indicate that an amorphous semiconductor is formed. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | SEMICONDUCTING SILICIDES ; MAGNETIC SEMICONDUCTORS ; TRANSITION ; INSULATOR ; SILICON ; FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000176873300018 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429194 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, JP,Chen, NF,Zhang, FQ,et al. Gdxsi grown with mass-analyzed low energy dual ion beam epitaxy technique[J]. Journal of crystal growth,2002,242(3-4):389-394. |
| APA | Zhou, JP.,Chen, NF.,Zhang, FQ.,Song, SL.,Chai, CL.,...&Lin, LY.(2002).Gdxsi grown with mass-analyzed low energy dual ion beam epitaxy technique.Journal of crystal growth,242(3-4),389-394. |
| MLA | Zhou, JP,et al."Gdxsi grown with mass-analyzed low energy dual ion beam epitaxy technique".Journal of crystal growth 242.3-4(2002):389-394. |
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来源：半导体研究所
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