Quasi-thermo dynamic analysis of movpe growth of gaxalyin1-x-yn
文献类型：期刊论文
| 作者 | Lu, DC; Duan, SK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:145-152 |
| 关键词 | Computer simulation Molecular vapor phase epitaxy Nitrides Semiconducting quaternary alloys |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, dc() |
| 英文摘要 | A quasi-thermodynamic model of metalorganic vapor phase epitaxy (movpe) growth of gaxalyin1-x-yn alloys has been proposed. in view of the complex growth behavior of gaxalyin1-x-yn, we focus our attention on the galliumrich quaternary alloys that are lattice matched to gan, in0.15ga0.85n or al0.15ga0.85n, which are widely used in the gan-based optoelectronic devices. the relationship between gaalinn alloy composition and input molar ratio of group iii metalorganic compounds at various growth conditions has been calculated. the influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group iii metalorganics, reactor pressure, v/iii ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. based on these calculated results, we can find out the appropriate growth conditions for the movpe growth of gaxalyin1-x-yn alloy lattice matched to gan, in0.15ga0.85n or al0.15ga0.85n. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; QUATERNARY ALLOYS ; PHASE EPITAXY ; GAN ; ALINGAN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000172034400020 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429195 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, DC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, DC,Duan, SK. Quasi-thermo dynamic analysis of movpe growth of gaxalyin1-x-yn[J]. Journal of crystal growth,2002,234(1):145-152. |
| APA | Lu, DC,&Duan, SK.(2002).Quasi-thermo dynamic analysis of movpe growth of gaxalyin1-x-yn.Journal of crystal growth,234(1),145-152. |
| MLA | Lu, DC,et al."Quasi-thermo dynamic analysis of movpe growth of gaxalyin1-x-yn".Journal of crystal growth 234.1(2002):145-152. |
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来源：半导体研究所
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