Studies of 6h-sic devices
文献类型：期刊论文
| 作者 | Wang, SR; Liu, ZL |
| 刊名 | Current applied physics
 |
| 出版日期 | 2002-10-01 |
| 卷号 | 2期号:5页码:393-399 |
| 关键词 | Sic Schottky Pn junction diodes Mos capacitor |
| ISSN号 | 1567-1739 |
| 通讯作者 | Wang, sr() |
| 英文摘要 | Silicon carbide (sic) is recently receiving increased attention due to its unique electrical and thermal properties. it has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. the fabrication processes and characterization of basic device on 6h-sic were systematically studied. the main works are summarized as follows: the homoepitaxial growth on the commercially available single-crystal 6h-sic wafers was performed in a modified gas source molecular beam epitaxy system. the mesa structured p(+)n junction diodes on the material were fabricated and characterized. the diodes showed a high breakdown voltage of 800 v at room temperature. they operated with good rectification characteristics from room temperature to 673 k. using thermal evaporation, ti/6h-sic schottky barrier diodes were fabricated. they showed good rectification characteristics from room temperature to 473 k. using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 v. n-type 6h-sic mos capacitors were fabricated and characterized. under the same growing conditions, the quality of polysilicon gate capacitors was better than al. in addition, sic mos capacitors had good tolerance to gamma rays. (c) 2002 published by elsevier science b.v. |
| WOS关键词 | JUNCTION DIODES |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000179330900009 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429196 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, SR |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, SR,Liu, ZL. Studies of 6h-sic devices[J]. Current applied physics,2002,2(5):393-399. |
| APA | Wang, SR,&Liu, ZL.(2002).Studies of 6h-sic devices.Current applied physics,2(5),393-399. |
| MLA | Wang, SR,et al."Studies of 6h-sic devices".Current applied physics 2.5(2002):393-399. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。