The structure and current-voltage characteristics of multi-sheet ingan quantum dots grown by a new multi-step method
文献类型：期刊论文
| 作者 | Chen, Z; Lu, DC; Han, P; Liu, XL; Wang, XH; Li, YF; Yuan, HR; Lu, Y; Bing, LD; Zhu, QS |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-08-01 |
| 卷号 | 243期号:1页码:19-24 |
| 关键词 | Nanostructures Metalorganic chemical vapor deposition Nitrides |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, z() |
| 英文摘要 | Multi-sheet ingan/gan quantum dots (qds) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. this method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. the ingan quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. the ingan qds in upper layer grew bigger. to our knowledge, the current-voltage characteristics of multi-sheet ingan/gan qds were measured for the fist time. two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. some current peaks only appeared in positive voltage for sample due to the non-uniformity of the qds in the structure. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | SELF-ORGANIZED GROWTH ; EPITAXIAL-GROWTH ; GAAS ; GAN ; PHOTOLUMINESCENCE ; SURFACTANT ; ALGAAS ; WIRE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000178476600004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429199 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Z |
| 作者单位 | 1.Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China 3.Aerosp Corp, Inst China 23, Beijing 100854, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Z,Lu, DC,Han, P,et al. The structure and current-voltage characteristics of multi-sheet ingan quantum dots grown by a new multi-step method[J]. Journal of crystal growth,2002,243(1):19-24. |
| APA | Chen, Z.,Lu, DC.,Han, P.,Liu, XL.,Wang, XH.,...&Yan, L.(2002).The structure and current-voltage characteristics of multi-sheet ingan quantum dots grown by a new multi-step method.Journal of crystal growth,243(1),19-24. |
| MLA | Chen, Z,et al."The structure and current-voltage characteristics of multi-sheet ingan quantum dots grown by a new multi-step method".Journal of crystal growth 243.1(2002):19-24. |
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来源：半导体研究所
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