Progress of si-based nanocrystalline luminescent materials
文献类型：期刊论文
| 作者 | Peng, YC; Zhao, XW; Fu, GS |
| 刊名 | Chinese science bulletin
 |
| 出版日期 | 2002-08-01 |
| 卷号 | 47期号:15页码:1233-1242 |
| 关键词 | Si-based nanomaterials Fabricated method Structural characterization Light emitting mechanism Si-based photoelectronic devices |
| ISSN号 | 1001-6538 |
| 通讯作者 | Peng, yc() |
| 英文摘要 | Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. si light emitting diode, si laser and integrated si-based photoelectronics. among them are nano-scale porous silicon (ps), si nanocrystalline embedded sio2 (siox, x < 2.0) matrices, si nanoquantum dot and si/sio2 superlattice, etc. at present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (pl) and electroluminescence (el), it is possible for them to lead to a new informational revolution in the early days of the 21st century. in this article, we will mainly review the progress of study on si-based nanomaterials in the past ten years. the involved contents are the fabricated methods, structural characterizations and light emitting properties. finally, we predicate the developed tendency of this field in the following ten years. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SELF-ASSEMBLING FORMATION ; SILICON QUANTUM DOTS ; LASER-ABLATION ; OPTICAL-ABSORPTION ; POROUS SILICON ; LIGHT-EMISSION ; PHOTOLUMINESCENCE ; FABRICATION ; OXYGEN |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000177045600001 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429203 |
| 专题 | 半导体研究所 |
| 通讯作者 | Peng, YC |
| 作者单位 | 1.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microsturct, Beijing 10083, Peoples R China 3.Sci Univ Tokyo, Fac Sci, Dept Phys, Shinjuku Ku, Tokyo 1628501, Japan 4.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, YC,Zhao, XW,Fu, GS. Progress of si-based nanocrystalline luminescent materials[J]. Chinese science bulletin,2002,47(15):1233-1242. |
| APA | Peng, YC,Zhao, XW,&Fu, GS.(2002).Progress of si-based nanocrystalline luminescent materials.Chinese science bulletin,47(15),1233-1242. |
| MLA | Peng, YC,et al."Progress of si-based nanocrystalline luminescent materials".Chinese science bulletin 47.15(2002):1233-1242. |
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来源：半导体研究所
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