Ecr plasma in growth of cubic gan by low pressure mocvd
文献类型：期刊论文
| 作者 | Gu, B; Xu, Y; Qin, FW; Wang, SS; Sui, Y; Wang, ZG |
| 刊名 | Plasma chemistry and plasma processing
 |
| 出版日期 | 2002-03-01 |
| 卷号 | 22期号:1页码:159-174 |
| 关键词 | Ecr plasma Cubic gan Low pressure mocvd |
| ISSN号 | 0272-4324 |
| 通讯作者 | Gu, b() |
| 英文摘要 | To heteroepitaxally grow the crystalline cubic-gan (c-gan) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group iii nitride materials. we have obtained the crystalline c-gan film and the heteroepitaxial interface between c-gan and gaas (001) substrate by the ecr plasma-assisted metal organic chemical vapor deposition (pa-mocvd) under low-pressure and low-temperature (similar to600degreesc) on a homemade ecr-plasma semiconductor processing device (espd). in order to decrease the growth temperature, the ecr plasma source was adopted as the activated nitrogen source, therefore the working pressure of mocvd was decreased down to the region less than 1 pa. to eliminate the damages from energetic ions of current plasma source, a multi-cusp cavity,coupling ecr plasma source (mep) was selected to use in our experiment. to decrease the strain and dislocations induced from the large lattice mismatch between c-gan and gaas substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated the experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-gan film and interface between c-gan and gaas(001), and the roles of ecr plasma are described in this contribution. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; CYCLOTRON-RESONANCE PLASMA ; LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; GALLIUM NITRIDE ; GAAS ; DIMETHYLHYDRAZINE |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Chemical ; Physics, Applied ; Physics, Fluids & Plasmas |
| 语种 | 英语 |
| WOS记录号 | WOS:000173338500007 |
| 出版者 | KLUWER ACADEMIC/PLENUM PUBL |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429206 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gu, B |
| 作者单位 | 1.Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dept Electromagnet Engn, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gu, B,Xu, Y,Qin, FW,et al. Ecr plasma in growth of cubic gan by low pressure mocvd[J]. Plasma chemistry and plasma processing,2002,22(1):159-174. |
| APA | Gu, B,Xu, Y,Qin, FW,Wang, SS,Sui, Y,&Wang, ZG.(2002).Ecr plasma in growth of cubic gan by low pressure mocvd.Plasma chemistry and plasma processing,22(1),159-174. |
| MLA | Gu, B,et al."Ecr plasma in growth of cubic gan by low pressure mocvd".Plasma chemistry and plasma processing 22.1(2002):159-174. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。