Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure
文献类型：期刊论文
| 作者 | Zhang, JD; Zhang, H; Chen, JH; Deng, YM; Hu, CY; An, L; Yang, FH; Li, GH; Zheng, HZ |
| 刊名 | Journal of physics-condensed matter
 |
| 出版日期 | 2002-06-03 |
| 卷号 | 14期号:21页码:5349-5353 |
| ISSN号 | 0953-8984 |
| 通讯作者 | Zhang, jd() |
| 英文摘要 | By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an ingaas/gaas quantum well embedded in it, over a pressure range from 0.37 to 0.41 gpa. the experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum rabi splitting equal to 6.0 mev. a comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure. |
| WOS关键词 | HIGH MAGNETIC-FIELD ; QUANTUM MICROCAVITY ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000176400700011 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429225 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JD,Zhang, H,Chen, JH,et al. Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure[J]. Journal of physics-condensed matter,2002,14(21):5349-5353. |
| APA | Zhang, JD.,Zhang, H.,Chen, JH.,Deng, YM.,Hu, CY.,...&Zheng, HZ.(2002).Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure.Journal of physics-condensed matter,14(21),5349-5353. |
| MLA | Zhang, JD,et al."Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure".Journal of physics-condensed matter 14.21(2002):5349-5353. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。