Thermal annealing behaviour of ni/au on n-gan schottky contacts
文献类型：期刊论文
| 作者 | Sun, YP; Shen, XM; Wang, J; Zhao, DG; Feng, G; Fu, Y; Zhang, SM; Zhang, ZH; Feng, ZH; Bai, YX |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2002-10-21 |
| 卷号 | 35期号:20页码:2648-2651 |
| ISSN号 | 0022-3727 |
| 通讯作者 | Sun, yp() |
| 英文摘要 | The schottky behaviour of ni/au contact on n-gan was investigated under various annealing conditions by current-voltage (i-v) measurements. a non-linear fitting method was used to extract the contact parameters from the i-v characteristic curves. experimental results indicate that high quality schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 ev and 1.19 +/- 0.02 ev, respectively, can be obtained under 5 min annealing at 600degreesc in n-2 ambience. |
| WOS关键词 | RESISTANCE OHMIC CONTACTS ; FIELD-EFFECT TRANSISTOR ; SINGLE-CRYSTAL GAN ; MICROWAVE PERFORMANCE ; STABILITY ; BARRIER ; DIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000179131600030 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429226 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, YP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, YP,Shen, XM,Wang, J,et al. Thermal annealing behaviour of ni/au on n-gan schottky contacts[J]. Journal of physics d-applied physics,2002,35(20):2648-2651. |
| APA | Sun, YP.,Shen, XM.,Wang, J.,Zhao, DG.,Feng, G.,...&Yang, H.(2002).Thermal annealing behaviour of ni/au on n-gan schottky contacts.Journal of physics d-applied physics,35(20),2648-2651. |
| MLA | Sun, YP,et al."Thermal annealing behaviour of ni/au on n-gan schottky contacts".Journal of physics d-applied physics 35.20(2002):2648-2651. |
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来源：半导体研究所
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