Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd
文献类型：期刊论文
| 作者 | Chen, J; Zhang, SM; Zhang, BS; Zhu, JJ; Shen, XM; Feng, G; Liu, JP; Wang, YT; Yang, H; Zheng, WC |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-09-01 |
| 卷号 | 256期号:3-4页码:248-253 |
| 关键词 | In situ laser reflectometry Lateral overgrowths Surface morphology Metalorganic chemical vapor deposition Gan |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01367-8 |
| 通讯作者 | Chen, j() |
| 英文摘要 | The morphological evolution of gan thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of gan nucleation layer (nl). for the commonly used two-step growth process, a change in deposition pressure of nl greatly influences the growth mode and morphological evolution of the following gan epitaxy. by means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the nl and subsequently the growth mode of fit gan epilayer may be directly controlled by tailoring the initial low temperature nl growth pressure. a mode is proposed to explain the td reduction for nl grown at relatively high reactor pressure. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; SAPPHIRE SUBSTRATE ; NUCLEATION LAYERS ; QUALITY ; TEMPERATURE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000184573400006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429242 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, J |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, J,Zhang, SM,Zhang, BS,et al. Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd[J]. Journal of crystal growth,2003,256(3-4):248-253. |
| APA | Chen, J.,Zhang, SM.,Zhang, BS.,Zhu, JJ.,Shen, XM.,...&Zheng, WC.(2003).Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd.Journal of crystal growth,256(3-4),248-253. |
| MLA | Chen, J,et al."Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd".Journal of crystal growth 256.3-4(2003):248-253. |
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来源：半导体研究所
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