A novel method of determining semiconductor parameters in ebic and sebiv modes of sem
文献类型：期刊论文
| 作者 | Zhu, SQ; Rau, EI; Yang, FH |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2003-04-01 |
| 卷号 | 18期号:4页码:361-366 |
| ISSN号 | 0268-1242 |
| 通讯作者 | Zhu, sq() |
| 英文摘要 | We present a novel method for determining semiconductor parameters such as diffusion length l, lifetime tau and surface recombination velocity s of minority carriers by employing scanning electron microscopy (sem). this new method is applicable to both electron beam induced current (ebic and surface electron beam induced voltage (sebiv) modes in sem. the quantitative descriptions for ebic and sebiv signals are derived. the parameters l, s and tau can be directly extracted from the expressions for ebic or sebiv signals and their relaxation characteristics in experiment. as an example, the values of l, s and tau for n-p junction and p-si crystal are determined by using the novel method in ebic or sebiv mode. the carrier diffusion length of a p-si crystal is determined to be 8.74 mum in sebiv mode. it is very close to the normal diffusion length of 7.41 mum of this sample. the novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. especially, the sebiv mode in sem shows great potential for investigating semiconductor structures nondestructively. |
| WOS关键词 | SURFACE RECOMBINATION VELOCITY ; DIFFUSION LENGTH ; LINE SCAN ; EXTRACTION |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000182640500033 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429244 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, SQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia |
| 推荐引用方式 GB/T 7714 | Zhu, SQ,Rau, EI,Yang, FH. A novel method of determining semiconductor parameters in ebic and sebiv modes of sem[J]. Semiconductor science and technology,2003,18(4):361-366. |
| APA | Zhu, SQ,Rau, EI,&Yang, FH.(2003).A novel method of determining semiconductor parameters in ebic and sebiv modes of sem.Semiconductor science and technology,18(4),361-366. |
| MLA | Zhu, SQ,et al."A novel method of determining semiconductor parameters in ebic and sebiv modes of sem".Semiconductor science and technology 18.4(2003):361-366. |
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来源：半导体研究所
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