Electron ground state energy level determination of znse self-organized quantum dots embedded in zns
文献类型：期刊论文
| 作者 | Lu, LW; Yang, CL; Wang, J; Sou, IK; Ge, WK |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2003-05-01 |
| 卷号 | 93期号:9页码:5325-5330 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.1559633 |
| 通讯作者 | Lu, lw() |
| 英文摘要 | Optical and electrical characterization of the zns self-organized quantum dots (qds) embedded in zns by molecular beam epitaxy have been investigated using photoluminescence (pl), capacitance-voltage (c-v), and deep level transient fourier spectroscopy (dltfs) techniques. the temperature dependence of the free exciton emission was employed to clarify the mechanism of the pl thermal quenching processes in the znse qds. the pl experimental data are well explained by a two-step quenching process. the c-v and dltfs techniques were used to obtain the quantitative information on the electron thermal emission from the znse qds. the correlation between the measured electron emission from the znse qds in the dltfs and the observed electron accumulation in the c-v measurements was clearly demonstrated. the emission energy for the ground state of the znse qds was determined to be at about 120 mev below the conduction band edge of the zns barrier, which is in good agreement with the thermal activation energy, 130 mev, obtained by fitting the thermal quenching process of the free exciton pl peak. (c) 2003 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; TRANSIENT SPECTROSCOPY ; TEMPERATURE-DEPENDENCE ; PHOTOLUMINESCENCE ; WELL ; EPILAYERS ; SURFACE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000182296700056 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429247 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, LW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, LW,Yang, CL,Wang, J,et al. Electron ground state energy level determination of znse self-organized quantum dots embedded in zns[J]. Journal of applied physics,2003,93(9):5325-5330. |
| APA | Lu, LW,Yang, CL,Wang, J,Sou, IK,&Ge, WK.(2003).Electron ground state energy level determination of znse self-organized quantum dots embedded in zns.Journal of applied physics,93(9),5325-5330. |
| MLA | Lu, LW,et al."Electron ground state energy level determination of znse self-organized quantum dots embedded in zns".Journal of applied physics 93.9(2003):5325-5330. |
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来源：半导体研究所
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