中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Whispering-gallery-likel modes in square resonators

文献类型:期刊论文

作者Guo, WH; Huang, YZ; Lu, QY; Vu, LJ
刊名Ieee journal of quantum electronics
出版日期2003-09-01
卷号39期号:9页码:1106-1110
关键词Microcavities Semiconductor lasers Square resonators Whispering-gallery (wg) modes
ISSN号0018-9197
DOI10.1109/jqe.2003.816090
通讯作者Guo, wh()
英文摘要The mode frequencies and field distributions of whispering-gallery (wg)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the fdtd technique and pade approximation method. in the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. the wg-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.
WOS关键词MICRODISK INJECTION-LASER ; MICROCAVITIES ; MICROLASERS ; SIMULATION ; RESONANCES ; CAVITIES ; EMISSION ; CRYSTALS
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000185017100009
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2429248
专题半导体研究所
通讯作者Guo, WH
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Guo, WH,Huang, YZ,Lu, QY,et al. Whispering-gallery-likel modes in square resonators[J]. Ieee journal of quantum electronics,2003,39(9):1106-1110.
APA Guo, WH,Huang, YZ,Lu, QY,&Vu, LJ.(2003).Whispering-gallery-likel modes in square resonators.Ieee journal of quantum electronics,39(9),1106-1110.
MLA Guo, WH,et al."Whispering-gallery-likel modes in square resonators".Ieee journal of quantum electronics 39.9(2003):1106-1110.

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来源:半导体研究所

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